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December 2013
FCP190N60 / FCPF190N60
N-Channel SuperFET ? II MOSFET
600 V, 20.2 A, 199 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 170 m Ω
? Ultra Low Gate Charge (Typ. Q g = 57 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 160 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? II MOSFET is Fairchild Semiconductor ’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
? LCD / LED / PDP TV Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP190N60 FCPF190N60
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- DC
- AC
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(f > 1 Hz)
20.2
12.7
±20
±30
20.2*
12.7*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate Above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60.6
208
1.67
400
4.0
2.1
100
20
60.6*
39
0.31
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60
0.6
62.5
FCPF190N60
3.2
62.5
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
1
www.fairchildsemi.com
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相关代理商/技术参数
FCP190N60_13 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SuperFET II MOSFET
FCP190N60_GF102 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SuperFET2, 190mohm, TO220, F102 Opt, Green EMC
FCP190N60E 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCP1913H104G 功能描述:薄膜电容器 .10uF 50V 2% RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104G-E2 功能描述:薄膜电容器 0.1uF 50Volts RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104G-E3 功能描述:薄膜电容器 .10uF 50V 2% RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104J 功能描述:薄膜电容器 1913 50V .1uF RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm
FCP1913H104J-E2 功能描述:薄膜电容器 1913 50V .1uF RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm